Rafal Oszwaldowski, Jacek A. Majewski, Tomasz Dietl
Published 2007-01-17Version 1
We present results of numerical calculations of domain-wall resistance in the ferromagnetic semiconductor (Ga,Mn)As. We employ Landauer-Buttiker formalism and the tight binding method. Taking into account the full valence band structure we predict the magnitude of the domain-wall resistance without disorder and compare it to experimental values. Next we add disorder to the model and study numerically both small and large disorder regime.
Comments: Comments accepted to: Proceedings of the 28th International Conference on the Physics of Semiconductors (AIP CP)
Journal: Proceedings of the 28th International Conference on the Physics of Semiconductors (2006), AIP Conf. Proc. -- April 10, 2007 -- Volume 893, pp. 1277-1278
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