Anharmonicity and asymmetry of Landau levels for a two-dimensional electron gas

Stephane Bonifacie, Christophe Chaubet, Benoit Jouault, Andre Raymond

Published 2005-03-30, updated 2005-05-07Version 2

We calculate the density of states of a two dimensional electron gas located at the interface of a GaAlAs/GaAs heterojunction. The disorder potential which is generally created by a single doping layer behind a spacer, is here enhanced by the presence of a second delta doped layer of scatterers which can be repulsive or attractive impurities. We have calculated the density of states by means of the Klauder's approximation, in the presence of a magnetic field of arbitrary strength. At low field either band tails or impurity bands are observed for attractive potentials, depending on the impurity concentration. At higher field, impurity bands are observed for both repulsive and attractive potentials. We discuss the effect of such an asymmetrical density of states on the transport properties in the quantum Hall effect regime.