arXiv Analytics

Sign in

arXiv:1810.04648 [cond-mat.mtrl-sci]AbstractReferencesReviewsResources

Charge transfer and tunable built-in electric fields across semiconductor-crystalline oxide interfaces

Zheng Hui Lim, Nicholas F. Quackenbush, Aubrey Penn, Matthew Chrysler, Mark Bowden, Zihua Zhu, James M. Ablett, Tien-lin Lee, James M. LeBeau, Joseph C. Woicik, Peter V. Sushko, Scott A. Chambers, Joseph H. Ngai

Published 2018-10-10Version 1

Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich setting in which built-in fields can be explored. Here, we present an electrical transport and hard X-ray photoelectron spectroscopy study of epitaxial SrNbxTi1-xO3-{\delta} / Si heterojunctions. A non-monotonic anomaly in the sheet resistance is observed near room temperature, which is accompanied by a crossover in sign of the Hall resistance. The crossover is consistent with the formation of a hole gas in the Si and the presence of a built-in field. Hard X-ray photoelectron spectroscopy measurements reveal pronounced asymmetric features in both the SrNbxTi1-xO3-{\delta} and Si core-level spectra that we show arise from built-in fields. The extended probe depth of hard X-ray photoelectron spectroscopy enables band bending across the SrNbxTi1-xO3-{\delta} / Si heterojunction to be spatially mapped. Band alignment at the interface and surface depletion in SrNbxTi1-xO3-{\delta} are implicated in the formation of the hole gas and built-in fields. Control of charge transfer and built-in electric fields across semiconductor-crystalline oxide interfaces opens a pathway to novel functional heterojunctions.

Related articles: Most relevant | Search more
arXiv:1007.3797 [cond-mat.mtrl-sci] (Published 2010-07-22)
Correlation between stick-slip frictional sliding and charge transfer
arXiv:cond-mat/0001099 (Published 2000-01-10)
Connection between charge transfer and alloying core-level shifts based on density-functional calculations
arXiv:1801.04637 [cond-mat.mtrl-sci] (Published 2018-01-15)
Electronic Structure of the Dilute Magnetic Semiconductor $Ga_{1-x}Mn_xP$ from Hard X-ray Photoelectron Spectroscopy and Hard X-ray Angle-Resolved Photoemission
Armela Keqi et al.