arXiv Analytics

Sign in

arXiv:1108.5844 [math.AP]AbstractReferencesReviewsResources

Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate

Hao Wu, Jie Jiang

Published 2011-08-30, updated 2013-06-03Version 2

In this paper, we study the Cauchy problem of a time-dependent drift-diffusion-Poisson system for semiconductors. Existence and uniqueness of global weak solutions are proven for the system with a higher-order nonlinear recombination-generation rate R. We also show that the global weak solution will converge to a unique equilibrium as time tends to infinity.

Categories: math.AP
Related articles: Most relevant | Search more
arXiv:1009.3076 [math.AP] (Published 2010-09-16, updated 2010-10-03)
On the global solutions of the Higgs boson equation
arXiv:0704.1866 [math.AP] (Published 2007-04-14, updated 2009-06-06)
On global solution to the Klein-Gordon-Hartree equation below energy space
arXiv:2306.06045 [math.AP] (Published 2023-06-09)
Global solution and blow-up for the SKT model in Population Dynamics

Links

Toolbox