arXiv Analytics

Sign in

arXiv:1010.4168 [cond-mat.mes-hall]AbstractReferencesReviewsResources

A Systematic Study of Electronic Structure from Graphene to Graphane

Prachi Chandrachud, Bhalchandra S Pujari, Soumyajyoti Haldar, Biplab Sanyal, D G Kanhere

Published 2010-10-20Version 1

While graphene is a semi-metal, a recently synthesized hydrogenated graphene called graphane, is an insulator. We have probed the transformation of graphene upon hydrogenation to graphane within the framework of density functional theory. By analyzing the electronic structure for eighteen different hydrogen concentrations, we bring out some novel features of this transition. Our results show that the hydrogenation favors clustered configurations leading to the formation of compact islands. The analysis of the charge density and electron localization function (ELF) indicates that as hydrogen coverage increases the semi-metal turns into a metal showing a delocalized charge density, then transforms into an insulator. The metallic phase is spatially inhomogeneous in the sense, it contains the islands of insulating regions formed by hydrogenated carbon atoms and the metallic channels formed by contiguous bare carbon atoms. It turns out that it is possible to pattern the graphene sheet to tune the electronic structure. For example removal of hydrogen atoms along the diagonal of the unit cell yielding an armchair pattern at the edge gives rise to a band gap of 1.4 eV. We also show that a weak ferromagnetic state exists even for a large hydrogen coverage whenever there is a sub-lattice imbalance in presence of odd number of hydrogen atoms.

Comments: This is an author-created, un-copyedited version of an article accepted for publication in J. Phys.: Condens. Matter
Journal: J. Phys.: Condens. Matter 22 (2010) 465502
Related articles: Most relevant | Search more
arXiv:1108.5511 [cond-mat.mes-hall] (Published 2011-08-28)
Electronic Structure and Optical Absorption of Fluorographene
arXiv:1107.0075 [cond-mat.mes-hall] (Published 2011-06-30)
Electronic structure of silicon-based nanostructures
arXiv:0910.2822 [cond-mat.mes-hall] (Published 2009-10-15)
Electronic structure near an impurity and terrace on the surface of a 3-dimensional topological insulator