Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well

Kiyohiko Toyama, Takahisa Nishioka, Kentarou Sawano, Yasuhiro Shiraki, Tohru Okamoto

Published 2008-02-26, updated 2008-07-03Version 2

Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.