{
  "id": "cond-mat/0602376",
  "version": "v1",
  "published": "2006-02-16T11:15:13.000Z",
  "updated": "2006-02-16T11:15:13.000Z",
  "title": "Manifestation of the Exchange Enhancement of the Valley Splitting in the Quantum Hall Effect Regime",
  "authors": [
    "I. Shlimak",
    "V. Ginodman",
    "K. -J. Friedland",
    "S. V. Kravchenko"
  ],
  "comment": "4 pages, 6 figures",
  "journal": "Phys. Rev. B 73, 205324 (2006)",
  "doi": "10.1103/PhysRevB.73.205324",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report a new \"dip\" effect in the Hall resistance, R_{xy}, of a Si metal-oxide-semiconductor field-effect transistor in the quantum Hall effect regime. With increasing magnetic field, the Hall resistance moves from the plateau at Landau filling factor \\nu=6 directly to the plateau at \\nu=4, skipping the plateau at \\nu=5. However, when the filling factor approaches \\nu=5, the Hall resistance sharply \"dives\" to the value 1/5(h/e^2) characteristic of the \\nu=5 plateau, and then returns to 1/4(h/e^2). This is interpreted as a manifestation of the oscillating exchange enhancement of the valley splitting when the Fermi level is in the middle between two adjacent valley-split Landau bands with the asymmetric position of the extended states.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2006-02-16T11:15:13.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "quantum hall effect regime",
      "exchange enhancement",
      "valley splitting",
      "hall resistance",
      "manifestation"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. B"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}