{
  "id": "cond-mat/0508006",
  "version": "v1",
  "published": "2005-07-30T00:08:45.000Z",
  "updated": "2005-07-30T00:08:45.000Z",
  "title": "Hall effect in the accumulation layers on the surface of organic semiconductors",
  "authors": [
    "V. Podzorov",
    "E. Menard",
    "J. A. Rogers",
    "M. E. Gershenson"
  ],
  "comment": "11 pages",
  "doi": "10.1103/PhysRevLett.95.226601",
  "categories": [
    "cond-mat.mtrl-sci"
  ],
  "abstract": "We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carriers extracted from the Hall measurements, n_H, coincides with the density n calculated using the gate-channel capacitance, and becomes smaller than n in the trap-dominated regime. The Hall data are consistent with the diffusive band-like motion of field-induced charge carriers between the trapping events.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2005-07-30T00:08:45.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "hall effect",
      "field-induced charge carriers",
      "small-molecule organic semiconductor",
      "gate-channel capacitance",
      "hall data"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. Lett."
    },
    "note": {
      "typesetting": "TeX",
      "pages": 11,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}