{
  "id": "2309.05945",
  "version": "v1",
  "published": "2023-09-12T03:50:05.000Z",
  "updated": "2023-09-12T03:50:05.000Z",
  "title": "Gap and magnetic engineering via doping and pressure in tuning the colossal magnetoresistance in (Mn$_{1-x}$Mg$_x$)$_3$Si$_2$Te$_6$",
  "authors": [
    "Chaoxin Huang",
    "Mengwu Huo",
    "Xing Huang",
    "Hui Liu",
    "Lisi Li",
    "Ziyou Zhang",
    "Zhiqiang Chen",
    "Yifeng Han",
    "Lan Chen",
    "Feixiang Liang",
    "Hongliang Dong",
    "Bing Shen",
    "Hualei Sun",
    "Meng Wang"
  ],
  "comment": "5 pages, 5 figures",
  "categories": [
    "cond-mat.mtrl-sci",
    "cond-mat.str-el"
  ],
  "abstract": "Ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$ keeps the records of colossal magnetoresistance (CMR) and angular magnetoresistance (AMR). Here we report tuning the electronic transport properties via doping and pressure in (Mn$_{1-x}$Mg$_x$)$_3$Si$_2$Te$_6$. As the substitution of nonmagnetic Mg$^{2+}$ for magnetic Mn$^{2+}$, ferrimagnetic transition temperature $T_C$ gradually decreases, while the resistivity increases significantly. At the same time, the CMR and AMR are both enhanced for the low-doping compositions (e.g., $x = 0.1$ and 0.2), which can be attributed to doping-induced broadening of the band gap and a larger variation range of the resistivity when undergoing a metal-insulator transition by applying a magnetic field along the $c$ axis. On the contrary, $T_C$ rises with increasing pressure due to the enhancement of the magnetic exchange interactions until a structural transition at $\\sim$13 GPa. Meanwhile, the activation gap is lowered under pressure and the magnetoresistance is decreased dramatically above 6 GPa where the gap is closed. The results reveal that doping and pressure are effective methods to tune the activation gap, and correspondingly, the CMR and AMR in nodal-line semiconductors, providing an approach to investigate the magnetoresistance materials for novel spintronic devices.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2023-09-12T03:50:05.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "colossal magnetoresistance",
      "magnetic engineering",
      "ferrimagnetic nodal-line semiconductor mn",
      "activation gap",
      "electronic transport properties"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 5,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}