{
  "id": "2005.10819",
  "version": "v1",
  "published": "2020-05-21T17:53:01.000Z",
  "updated": "2020-05-21T17:53:01.000Z",
  "title": "Wafer-scale fabrication of fast two-dimensional beta-In2Se3 photodetectors",
  "authors": [
    "Marcel S. Claro",
    "Justyna Grzonka",
    "Nicoleta Nicoara",
    "Paulo J. Ferreira",
    "Sascha Sadewasser"
  ],
  "categories": [
    "cond-mat.mtrl-sci",
    "cond-mat.mes-hall",
    "physics.app-ph"
  ],
  "abstract": "The epitaxial growth of two-dimensional (2D) $\\beta-In_2Se_3$ material was obtained over 2-inches c-sapphire wafers using molecular beam epitaxy (MBE). Excellent quality of thick (90 nm) and very thin films, down to two quintuple layers (2 nm), was confirmed by x-ray diffraction (XRD), Raman spectroscopy, and aberration-corrected scanning transmission electron microscopy (ac-STEM). Wafer-scale fabrication of photodetectors based on five quintuple layers was produced using photolithography and other standard semiconductor processing methods. The photodetectors exhibit responsivity of 3 mA/W, peak specific detectivity (D*) of $10^9$ Jones, external quantum efficiency (EQE) of 0.67 % at 550 nm, and response-time of ~7 ms, which is faster than any result previously reported for $\\beta-In_2Se_3$ photodetectors. From the photocurrent measurements, an optical bandgap of 1.38 eV was observed. These results on wafer-scale deposition of 2D $In_2Se_3$, as well as its fabrication into optoelectronic devices provide the missing link that will enable the commercialization of 2D materials.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2020-05-21T17:53:01.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "fast two-dimensional beta-in2se3 photodetectors",
      "wafer-scale fabrication",
      "quintuple layers",
      "standard semiconductor processing methods",
      "molecular beam epitaxy"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}