arXiv Analytics

Sign in

arXiv:1806.05155 [cond-mat.mtrl-sci]AbstractReferencesReviewsResources

Measuring the Local Twist Angle and Layer Arrangement in Van der Waals Heterostructures

Tobias A. de Jong, Johannes Jobst, Hyobin Yoo, Eugene E. Krasovskii, Philip Kim, Sense Jan van der Molen

Published 2018-06-13Version 1

The properties of Van der Waals heterostructures are determined by the twist angle and the interface between adjacent layers as well as their polytype and stacking. Here we describe the use of spectroscopic Low Energy Electron Microscopy (LEEM) and micro Low Energy Electron Diffraction ({\mu}LEED) methods to measure these properties locally. We present results on a MoS$_{2}$/hBN heterostructure, but the methods are applicable to other materials. Diffraction spot analysis is used to assess the benefits of using hBN as a substrate. In addition, by making use of the broken rotational symmetry of the lattice, we determine the cleaving history of the MoS$_{2}$ flake, i.e., which layer stems from where in the bulk.

Related articles: Most relevant | Search more
arXiv:1711.03465 [cond-mat.mtrl-sci] (Published 2017-11-09)
Heterointerface effects in the electro-intercalation of van der Waals heterostructures
arXiv:1710.11520 [cond-mat.mtrl-sci] (Published 2017-10-31)
Electrostatics of electron-hole interactions in van der Waals heterostructures
arXiv:1406.3173 [cond-mat.mtrl-sci] (Published 2014-06-12)
New Family of Robust 2D Topological Insulators in van der Waals Heterostructures