arXiv Analytics

Sign in

arXiv:1406.3173 [cond-mat.mtrl-sci]AbstractReferencesReviewsResources

New Family of Robust 2D Topological Insulators in van der Waals Heterostructures

Liangzhi Kou, Shu-Chun Wu, Claudia Felser, Thomas Frauenheim, Changfeng Chen, Binghai Yan

Published 2014-06-12Version 1

We predict a new family of robust two-dimensional (2D) topological insulators in van der Waals heterostructures comprising graphene and chalcogenides BiTeX (X=Cl, Br and I). The layered structures of both constituent materials produce a naturally smooth interface that is conducive to proximity induced new topological states. First principles calculations reveal intrinsic topologically nontrivial bulk energy gaps as large as 70-80 meV, which can be further enhanced up to 120 meV by compression. The strong spin-orbit coupling in BiTeX has a significant influence on the graphene Dirac states, resulting in the topologically nontrivial band structure, which is confirmed by calculated nontrivial Z2 index and an explicit demonstration of metallic edge states. Such heterostructures offer an unique Dirac transport system that combines the 2D Dirac states from graphene and 1D Dirac edge states from the topological insulator, and it offers new ideas for innovative device designs.

Related articles: Most relevant | Search more
arXiv:1806.05155 [cond-mat.mtrl-sci] (Published 2018-06-13)
Measuring the Local Twist Angle and Layer Arrangement in Van der Waals Heterostructures
arXiv:2107.13096 [cond-mat.mtrl-sci] (Published 2021-07-27)
Trapping Interlayer Excitons in van der Waals Heterostructures by Potential Arrays
arXiv:2306.12821 [cond-mat.mtrl-sci] (Published 2023-06-22)
Momentum matching and band-alignment type in van der Waals heterostructures: Interfacial effects and materials screening