{
  "id": "1401.1897",
  "version": "v1",
  "published": "2014-01-09T05:41:40.000Z",
  "updated": "2014-01-09T05:41:40.000Z",
  "title": "Fabrication of Electronic Fabry-Perot Interferometer in the Quantum Hall Regime",
  "authors": [
    "Sanghun An",
    "Simas Glinskis",
    "Woowon Kang",
    "Leo Ocola",
    "Loren Pfeiffer",
    "Ken West",
    "Kirk Baldwin"
  ],
  "comment": "3 pages, 3 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "A fabrication method for electronic quantum Hall Fabry-Perot interferometers (FPI) is presented. Our method uses a combination of e-beam lithography and low-damage dry-etching to produce the FPIs and minimize the excitation of charged traps or deposition of impurities near the device. Optimization of the quantum point contacts (QPC) is achieved via systematically varying the etch depth and monitoring the device resistance between segmented etching sessions. The etching is stopped when a desired value of resistance is obtained. Finer control of interference trajectories is obtained by the gate metallized inside the etched area by e-beam evaporation. Our approach allows for a control of the delicate potential bending near the quantum well by tuning the confining potential of the quantum point contacts.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2014-01-09T05:41:40.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "quantum hall regime",
      "electronic fabry-perot interferometer",
      "quantum point contacts",
      "fabrication",
      "electronic quantum hall fabry-perot interferometers"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 3,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2014arXiv1401.1897A"
    }
  }
}