{ "id": "1212.5143", "version": "v1", "published": "2012-12-20T17:04:13.000Z", "updated": "2012-12-20T17:04:13.000Z", "title": "Scanning tunneling microscopy with InAs nanowire tips", "authors": [ "Kilian Flöhr", "Kamil Sladek", "H. Yusuf Günel", "Mihail Ion Lepsa", "Hilde Hardtdegen", "Marcus Liebmann", "Thomas Schäpers", "Markus Morgenstern" ], "journal": "Appl. Phys. Lett. 101, 243101 (2012)", "doi": "10.1063/1.4769450", "categories": [ "cond-mat.mes-hall" ], "abstract": "Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with submicrometer precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z-noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.", "revisions": [ { "version": "v1", "updated": "2012-12-20T17:04:13.000Z" } ], "analyses": { "subjects": [ "81.05.Ea", "81.15.Kk", "81.16.Nd", "81.07.Gf", "07.79.Cz", "68.37.Ef" ], "keywords": [ "scanning tunneling microscopy", "inas nanowire tips", "selective-area vapor phase epitaxy", "subsequent electron microscopy images", "indium arsenide nanowires grown" ], "tags": [ "journal article" ], "publication": { "journal": "Applied Physics Letters", "year": 2012, "month": "Dec", "volume": 101, "number": 24, "pages": 243101 }, "note": { "typesetting": "TeX", "pages": 0, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2012ApPhL.101x3101F" } } }