{
  "id": "1009.1030",
  "version": "v2",
  "published": "2010-09-06T11:28:49.000Z",
  "updated": "2010-12-03T14:06:02.000Z",
  "title": "The role of electron-electron scattering in spin transport",
  "authors": [
    "Akashdeep Kamra",
    "Bahniman Ghosh"
  ],
  "comment": "to appear in Journal of Applied Physics",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We investigate spin transport in quasi 2DEG formed by III-V semiconductor heterojunctions using the Monte Carlo method. The results obtained with and without electron-electron scattering are compared and appreciable difference between the two is found. The electron-electron scattering leads to suppression of Dyakonov-Perel mechanism (DP) and enhancement of Elliott-Yafet mechanism (EY). Finally, spin transport in InSb and GaAs heterostructures is investigated considering both DP and EY mechanisms. While DP mechanism dominates spin decoherence in GaAs, EY mechanism is found to dominate in high mobility InSb. Our simulations predict a lower spin relaxation/decoherence rate in wide gap semiconductors which is desirable for spin transport.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2010-12-03T14:06:02.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "72.25.-b",
      "73.63.-b",
      "73.40.Kp"
    ],
    "keywords": [
      "spin transport",
      "electron-electron scattering",
      "dp mechanism dominates spin decoherence",
      "lower spin relaxation/decoherence rate",
      "ey mechanism"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "doi": "10.1063/1.3532042",
      "journal": "Journal of Applied Physics",
      "year": 2011,
      "month": "Jan",
      "volume": 109,
      "number": 2,
      "pages": 4501
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2011JAP...109b4501K"
    }
  }
}