{
  "id": "1003.0928",
  "version": "v1",
  "published": "2010-03-03T23:11:29.000Z",
  "updated": "2010-03-03T23:11:29.000Z",
  "title": "Fast tunnel rates in Si/SiGe one-electron single and double quantum dots",
  "authors": [
    "Madhu Thalakulam",
    "C. B. Simmons",
    "B. M. Rosemeyer",
    "D. E. Savage",
    "M. G. Lagally",
    "Mark Friesen",
    "S. N. Coppersmith",
    "M. A. Eriksson"
  ],
  "comment": "4 pages, double column, 3 figures",
  "journal": "Appl. Phys. Lett. 96, 183104 (2010)",
  "doi": "10.1063/1.3425892",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron dots can be challenging, in part due to the large electron effective mass in Si. Using charge sensing, we identify signatures of tunnel rates in and out of the dot that are fast or slow compared to the measurement rate. Such signatures provide a means to calibrate the absolute electron number and verify single electron occupation. Pulsed gate voltage measurements are used to validate the approach.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2010-03-03T23:11:29.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "73.40.Lq",
      "73.23.Hk",
      "73.40.Gk",
      "73.63.Kv",
      "71.18.+y"
    ],
    "keywords": [
      "double quantum dots",
      "si/sige one-electron single",
      "pulsed gate voltage measurements",
      "achieving fast tunnel rates",
      "verify single electron occupation"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "Applied Physics Letters",
      "year": 2010,
      "month": "May",
      "volume": 96,
      "number": 18,
      "pages": 183104
    },
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2010ApPhL..96r3104T"
    }
  }
}