{ "id": "0909.2981", "version": "v1", "published": "2009-09-16T11:07:06.000Z", "updated": "2009-09-16T11:07:06.000Z", "title": "Fractional topological excitations and quantum phase transition in a bilayer 2DEG adjacent to a superconductor film", "authors": [ "Ningning Hao", "Wei Zhang", "Zhigang Wang", "Yupeng Wang", "Ping Zhang" ], "comment": "5 pages, 4 figures", "categories": [ "cond-mat.mes-hall", "cond-mat.str-el" ], "abstract": "We study a bilayer two-dimension-electron-gas (2DEG) adjacent to a type-II superconductor thin film with a pinned vortex lattice. We find that with increasing interlayer tunneling, the system of half filling presents three phases: gapped phase-I (topological insulator), gapless critical phase-II (metal), and gapped phase-III (band insulator). The Hall conductance for phase-I/III is 2/0 $e^{2}/h$, and has non-quantized values in phase-II. The excitation (response to topological defect, a local vortex defect) in these three phases shows different behaviors due to the topological property of the system, including fractional charge $e/2$ for each layer in phase-I. While in the case of quarter filling, the system undergoes a quantum phase transition from metallic phase to topological insulator phase (with excitation of fractional charge $e/4$).", "revisions": [ { "version": "v1", "updated": "2009-09-16T11:07:06.000Z" } ], "analyses": { "subjects": [ "73.43.-f", "71.10.Pm", "74.25.Uv" ], "keywords": [ "quantum phase transition", "bilayer 2deg adjacent", "fractional topological excitations", "superconductor film", "type-ii superconductor thin film" ], "tags": [ "journal article" ], "publication": { "doi": "10.1103/PhysRevB.81.125301", "journal": "Physical Review B", "year": 2010, "month": "Mar", "volume": 81, "number": 12, "pages": 125301 }, "note": { "typesetting": "TeX", "pages": 5, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2010PhRvB..81l5301H" } } }