{ "id": "0801.4736", "version": "v1", "published": "2008-01-30T18:46:39.000Z", "updated": "2008-01-30T18:46:39.000Z", "title": "Single particle relaxation time versus transport scattering time in a 2D graphene layer", "authors": [ "E. H. Hwang", "S. Das Sarma" ], "comment": "7 pages, 4 figures", "journal": "Phys. Rev. B 77, 195412 (2008)", "doi": "10.1103/PhysRevB.77.195412", "categories": [ "cond-mat.mes-hall", "cond-mat.mtrl-sci" ], "abstract": "We theoretically calculate and compare the single-particle relaxation time ($\\tau_s$) defining quantum level broadening and the transport scattering time ($\\tau_t$) defining Drude conductivity in 2D graphene layers in the presence of screened charged impurities scattering and short-range defect scattering. We find that the ratio $\\tau_t/\\tau_s$ increases strongly with increasing $k_F z_i$ and $\\kappa$ where $k_F$, $z_i$, and $\\kappa$ are respectively the Fermi wave vector, the separation of the substrate charged impurities from the graphene layer, and the background lattice dielectric constant. A critical quantitative comparison of the $\\tau_t/\\tau_s$ results for graphene with the corresponding modulation-doped semiconductor structures is provided, showing significant differences between these two 2D carrier systems.", "revisions": [ { "version": "v1", "updated": "2008-01-30T18:46:39.000Z" } ], "analyses": { "subjects": [ "81.05.Uw", "72.10.-d", "72.15.Lh", "72.20.Dp" ], "keywords": [ "single particle relaxation time", "2d graphene layer", "transport scattering time", "background lattice dielectric constant", "charged impurities" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review B", "year": 2008, "month": "May", "volume": 77, "number": 19, "pages": 195412 }, "note": { "typesetting": "TeX", "pages": 7, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2008PhRvB..77s5412H" } } }