{
  "id": "0708.3617",
  "version": "v1",
  "published": "2007-08-27T14:23:59.000Z",
  "updated": "2007-08-27T14:23:59.000Z",
  "title": "Spin relaxation in the impurity band of a semiconductor in the external magnetic field",
  "authors": [
    "Ilya Lyubinskiy"
  ],
  "doi": "10.1134/S0021364008240089",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Spin relaxation in the impurity band of a 2D semiconductor with spin-split spectrum in the external magnetic field is considered. Several mechanisms of spin relaxation are shown to be relevant. The first one is attributed to phonon-assisted transitions between Zeeman sublevels of the ground state of an isolated impurity, while other mechanisms can be described in terms of spin precession in a random magnetic field during the electron motion over the impurity band. In the later case there are two contributions to the spin relaxation: the one given by optimal impurity configurations with the hop-waiting time inversely proportional to the external magnetic field and another one related to the electron motion on a large scale. The average spin relaxation rate is calculated.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2007-08-27T14:23:59.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "71.55.Jv",
      "71.70.Ej",
      "72.25.Rb",
      "85.75.-d"
    ],
    "keywords": [
      "external magnetic field",
      "impurity band",
      "average spin relaxation rate",
      "electron motion",
      "optimal impurity configurations"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "Soviet Journal of Experimental and Theoretical Physics Letters",
      "year": 2008,
      "month": "Feb",
      "volume": 88,
      "number": 12,
      "pages": 814
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2008JETPL..88..814L"
    }
  }
}